BEGIN:VCALENDAR
VERSION:2.0
PRODID:-//Penn Engineering Events - ECPv6.17.0//NONSGML v1.0//EN
CALSCALE:GREGORIAN
METHOD:PUBLISH
X-WR-CALNAME:Penn Engineering Events
X-ORIGINAL-URL:https://events.engineering.upenn.edu
X-WR-CALDESC:Events for Penn Engineering Events
REFRESH-INTERVAL;VALUE=DURATION:PT1H
X-Robots-Tag:noindex
X-PUBLISHED-TTL:PT1H
BEGIN:VTIMEZONE
TZID:America/New_York
BEGIN:DAYLIGHT
TZOFFSETFROM:-0500
TZOFFSETTO:-0400
TZNAME:EDT
DTSTART:20250309T070000
END:DAYLIGHT
BEGIN:STANDARD
TZOFFSETFROM:-0400
TZOFFSETTO:-0500
TZNAME:EST
DTSTART:20251102T060000
END:STANDARD
BEGIN:DAYLIGHT
TZOFFSETFROM:-0500
TZOFFSETTO:-0400
TZNAME:EDT
DTSTART:20260308T070000
END:DAYLIGHT
BEGIN:STANDARD
TZOFFSETFROM:-0400
TZOFFSETTO:-0500
TZNAME:EST
DTSTART:20261101T060000
END:STANDARD
BEGIN:DAYLIGHT
TZOFFSETFROM:-0500
TZOFFSETTO:-0400
TZNAME:EDT
DTSTART:20270314T070000
END:DAYLIGHT
BEGIN:STANDARD
TZOFFSETFROM:-0400
TZOFFSETTO:-0500
TZNAME:EST
DTSTART:20271107T060000
END:STANDARD
END:VTIMEZONE
BEGIN:VEVENT
DTSTART;TZID=America/New_York:20260618T100000
DTEND;TZID=America/New_York:20260618T100000
DTSTAMP:20260617T133531Z
CREATED:20260602T143931Z
LAST-MODIFIED:20260617T133531Z
UID:16481-1781776800-1781776800@events.engineering.upenn.edu
SUMMARY:ESE Ph.D. Thesis Defense: "2D/3D Heterostructures & Ultrathin AlScN Devices for Emerging Applications in Memory & Space"
DESCRIPTION:Zoom Link: https://upenn.zoom.us/j/92711825975?pwd=t5bjbMBW8FmePQfQVpwYAs7SyENU1r.1\nMeeting ID: 927 1182 5975\nPasscode: 429961 \nAbstract: The semiconductor industry’s ever-growing demand for smaller device dimensions\, better power efficiency and lower prices has pushed state of the art silicon-based computing technology to its physical limits. Ferroelectric non-volatile technology could be the answer to this challenge as it enables memory and logic tasks to be performed in the same physical units. This could lead to in-memory computing applications that are vastly energy efficient over present-day von Neumann architectures. My thesis focuses on the opportunities and challenges posed by 2D/3D heterojunctions in logic and memory devices. In this defense\, I demonstrate sub-10 nm thick ferroelectric Al1-xScₓN films on Al and Sc into capacitors\, diodes and transistors with 2D TMDC channels that reach sub-2 V operation. I demonstrate that ultrathin Al1-xScₓN can maintain robust ferroelectricity even when grown on industry-standard substrates that are compatible with present-day back-end-of-line processes. I also highlight the potential of Al1-xScₓN beyond low-power operation\, by demonstrating the resilience of Al1-xScₓN devices to gamma radiation—making this material also applicable to space and nuclear industries. Finally\, I present the anisotropic effects of non-ferroelectric wide-bandgap semiconductor Ga2O3 on 2D/3D diode performance\, and the implications for prospective industrial uses of Ga2O3. Overall\, my work aims to explore scaling and reduced power consumption in next-generation electronics\, and to encourage further research and innovation in this rapidly evolving field. \n 
URL:https://events.engineering.upenn.edu/event/ese-ph-d-thesis-defense-2d-3d-heterostructures-ultrathin-alscn-devices-for-emerging-applications-in-memory-space/
LOCATION:Greenberg Lounge (Room 114)\, Skirkanich Hall\, 210 South 33rd Street\, Philadelphia\, PA\, 19104\, United States
CATEGORIES:Dissertation or Thesis Defense
ORGANIZER;CN="Electrical and Systems Engineering":MAILTO:eseevents@seas.upenn.edu
END:VEVENT
END:VCALENDAR